| Literature DB >> 12906617 |
J G Braden1, J S Parker, P Xiong, S H Chun, N Samarth.
Abstract
We have carried out a direct measurement of the degree of spin polarization (P) of the magnetic semiconductor Ga1-xMnxAs using Andreev reflection spectroscopy. Analyses of the conductance spectra of high transparency Ga(0.95)Mn(0.05)As/Ga junctions consistently yield an intrinsic value for P greater than 85%. Our experiments also revealed an extreme sensitivity of the measured spin polarization to the nature and quality of the interface for this material.Year: 2003 PMID： 12906617 DOI： 10.1103/PhysRevLett.91.056602
Source DB: PubMed Journal: Phys Rev Lett ISSN： 0031-9007 Impact factor: 9.161