Literature DB >> 12871814

Materials science applications of HREELS in near edge structure analysis and low-energy loss spectroscopy.

S Lazar1, G A Botton, M-Y Wu, F D Tichelaar, H W Zandbergen.   

Abstract

New experiments made possible with a commercial transmission electron microscope (TEM) equipped with a high-resolution electron energy loss spectrometer (EELS) are presented. With this commercial system, a 100 meV energy resolution using a sub 2 nm probe or 500 meV at a 0.20 nm probe are possible, in combination with other modern techniques available for TEMs. In this paper a number of explorative examples of the first results are shown. The benefit of the increased resolution for detecting more details in near edge structures are shown for the Ti K edge in TiO(2) (brookite) and for the N K edge in cubic and hexagonal GaN. The bandgap of GaN is studied in both crystal structures, as well as the dependency of the low-loss spectrum on the momentum transfer direction in diffraction mode.

Year:  2003        PMID: 12871814     DOI: 10.1016/S0304-3991(03)00114-1

Source DB:  PubMed          Journal:  Ultramicroscopy        ISSN: 0304-3991            Impact factor:   2.689


  3 in total

1.  Nanotubes from the Misfit Layered Compound (SmS)1.19TaS2: Atomic Structure, Charge Transfer, and Electrical Properties.

Authors:  M B Sreedhara; Kristýna Bukvišová; Azat Khadiev; Daniel Citterberg; Hagai Cohen; Viktor Balema; Arjun K Pathak; Dmitri Novikov; Gregory Leitus; Ifat Kaplan-Ashiri; Miroslav Kolíbal; Andrey N Enyashin; Lothar Houben; Reshef Tenne
Journal:  Chem Mater       Date:  2022-02-10       Impact factor: 9.811

2.  Spatially Resolved Band Gap and Dielectric Function in Two-Dimensional Materials from Electron Energy Loss Spectroscopy.

Authors:  Abel Brokkelkamp; Jaco Ter Hoeve; Isabel Postmes; Sabrya E van Heijst; Louis Maduro; Albert V Davydov; Sergiy Krylyuk; Juan Rojo; Sonia Conesa-Boj
Journal:  J Phys Chem A       Date:  2022-02-15       Impact factor: 2.781

3.  Distinguishing cubic and hexagonal phases within InGaN/GaN microstructures using electron energy loss spectroscopy.

Authors:  I J Griffiths; D Cherns; S Albert; A Bengoechea-Encabo; M Angel Sanchez; E Calleja; T Schimpke; M Strassburg
Journal:  J Microsc       Date:  2015-09-14       Impact factor: 1.758

  3 in total

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