Literature DB >> 12786087

Diffusion thermopower of a two-dimensional hole gas in SiGe in a quantum Hall insulating state.

C Possanzini1, R Fletcher, P T Coleridge, Y Feng, R L Williams, J C Maan.   

Abstract

Both the temperature dependence of resistivity and thermopower of a two-dimensional hole gas in SiGe show a reentrant metal-insulator transition at filling factor nu=1.5, but with strikingly different behavior of the two coefficients. As the temperature is decreased in the insulating state, the resistivity diverges exponentially while the thermopower decreases rapidly, suggesting that the insulating state is due to the presence of a mobility edge rather than a gap at the Fermi energy.

Entities:  

Year:  2003        PMID: 12786087     DOI: 10.1103/PhysRevLett.90.176601

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  1 in total

1.  First-Principles Study of Silicon-Tin Alloys as a High-Temperature Thermoelectric Material.

Authors:  Shan Huang; Suiting Ning; Rui Xiong
Journal:  Materials (Basel)       Date:  2022-06-09       Impact factor: 3.748

  1 in total

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