| Literature DB >> 12786087 |
C Possanzini1, R Fletcher, P T Coleridge, Y Feng, R L Williams, J C Maan.
Abstract
Both the temperature dependence of resistivity and thermopower of a two-dimensional hole gas in SiGe show a reentrant metal-insulator transition at filling factor nu=1.5, but with strikingly different behavior of the two coefficients. As the temperature is decreased in the insulating state, the resistivity diverges exponentially while the thermopower decreases rapidly, suggesting that the insulating state is due to the presence of a mobility edge rather than a gap at the Fermi energy.Entities:
Year: 2003 PMID: 12786087 DOI: 10.1103/PhysRevLett.90.176601
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161