Literature DB >> 12786030

Impurity absorption spectroscopy in 28Si: the importance of inhomogeneous isotope broadening.

D Karaiskaj1, J A H Stotz, T Meyer, M L W Thewalt, M Cardona.   

Abstract

We report high-resolution infrared absorption spectra of the neutral donors phosphorus and lithium, and the neutral acceptor boron, in isotopically pure 28Si crystals. Surprisingly, many of the transitions are much sharper than previously reported in natural Si. In particular, the 2p(0) line of phosphorus in 28Si has a full width at half maximum of only 4.2 microeV, about 5 times less than the narrowest 2p(0) line previously reported for natural Si, making it the narrowest shallow impurity transition yet observed. The widely held assumptions that the impurity transitions previously reported in high quality samples of natural Si revealed the true, homogeneous linewidths, are thus shown to be incorrect. The sharper transitions in 28Si also reveal new substructures in the boron and lithium spectra.

Entities:  

Year:  2003        PMID: 12786030     DOI: 10.1103/PhysRevLett.90.186402

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  2 in total

1.  Coherent control of Rydberg states in silicon.

Authors:  P T Greenland; S A Lynch; A F G van der Meer; B N Murdin; C R Pidgeon; B Redlich; N Q Vinh; G Aeppli
Journal:  Nature       Date:  2010-06-24       Impact factor: 49.962

2.  Optical pumping and readout of bismuth hyperfine states in silicon for atomic clock applications.

Authors:  K Saeedi; M Szech; P Dluhy; J Z Salvail; K J Morse; H Riemann; N V Abrosimov; N Nötzel; K L Litvinenko; B N Murdin; M L W Thewalt
Journal:  Sci Rep       Date:  2015-05-20       Impact factor: 4.379

  2 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.