Literature DB >> 12772914

Optical and electrical properties of the wide gap, n-type semiconductors: ZnBi2O6 and MgBi2O6.

Hiroshi Mizoguchi1, Nattamai S P Bhuvanesh, Patrick M Woodward.   

Abstract

Characterization of polycrystalline samples of the trirutile oxides ZnBi2O6 and MgBi2O6 reveals temperature independent conductivity (0.4 and 0.01 S cm(-1)), a negative Seebeck coefficient (-0.035 and -0.025 mV K(-1)), and an optical band gap that falls at the low energy end of visible region (1.7 and 1.8 eV), this combination of attributes, indicating that these compounds are degenerate n-type semiconductors, has not previously been observed in a Bi(5+) oxide.

Entities:  

Year:  2003        PMID: 12772914     DOI: 10.1039/b300635b

Source DB:  PubMed          Journal:  Chem Commun (Camb)        ISSN: 1359-7345            Impact factor:   6.222


  1 in total

1.  One-Step Hydrothermal Synthesis of Nanostructured MgBi2O6/TiO2 Composites for Enhanced Hydrogen Production.

Authors:  Feng Xu; Chaohao Hu; Di Zhu; Dianhui Wang; Yan Zhong; Chengying Tang; Huaiying Zhou
Journal:  Nanomaterials (Basel)       Date:  2022-04-11       Impact factor: 5.719

  1 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.