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Literature DB >> 12764184

Applied physics. Transparent electronics.

John F Wager¹.

Abstract

Year: 2003 PMID： 12764184 DOI： 10.1126/science.1085276

Source DB: PubMed Journal: Science ISSN： 0036-8075 Impact factor: 47.728

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19 in total

1. Flexible metal-oxide devices made by room-temperature photochemical activation of sol-gel films.

Authors: Yong-Hoon Kim; Jae-Sang Heo; Tae-Hyeong Kim; Sungjun Park; Myung-Han Yoon; Jiwan Kim; Min Suk Oh; Gi-Ra Yi; Yong-Young Noh; Sung Kyu Park
Journal: Nature Date: 2012-09-06 Impact factor: 49.962

2. Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene.

Authors: Jun Yao; Jian Lin; Yanhua Dai; Gedeng Ruan; Zheng Yan; Lei Li; Lin Zhong; Douglas Natelson; James M Tour
Journal: Nat Commun Date: 2012 Impact factor: 14.919

3. Low temperature processed complementary metal oxide semiconductor (CMOS) device by oxidation effect from capping layer.

Authors: Zhenwei Wang; Hala A Al-Jawhari; Pradipta K Nayak; J A Caraveo-Frescas; Nini Wei; M N Hedhili; H N Alshareef
Journal: Sci Rep Date: 2015-04-20 Impact factor: 4.379

4. Transparent multi-level resistive switching phenomena observed in ITO/RGO/ITO memory cells by the sol-gel dip-coating method.

Authors: Hee-Dong Kim; Min Ju Yun; Jae Hoon Lee; Kyoeng Heon Kim; Tae Geun Kim
Journal: Sci Rep Date: 2014-04-09 Impact factor: 4.379

Applied physics. Transparent electronics.

1. Flexible metal-oxide devices made by room-temperature photochemical activation of sol-gel films.

2. Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene.

3. Low temperature processed complementary metal oxide semiconductor (CMOS) device by oxidation effect from capping layer.

4. Transparent multi-level resistive switching phenomena observed in ITO/RGO/ITO memory cells by the sol-gel dip-coating method.

5. Overview of emerging nonvolatile memory technologies.

6. Highly Robust Neutral Plane Oxide TFTs Withstanding 0.25 mm Bending Radius for Stretchable Electronics.

7. Resistive switching behavior of reduced graphene oxide memory cells for low power nonvolatile device application.

8. Surface passivation of semiconducting oxides by self-assembled nanoparticles.

9. Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors.

10. High mobility and high stability glassy metal-oxynitride materials and devices.