Literature DB >> 12689027

Giant planar Hall effect in epitaxial (Ga,Mn)as devices.

H X Tang1, R K Kawakami, D D Awschalom, M L Roukes.   

Abstract

Large Hall resistance jumps are observed in microdevices patterned from epitaxial (Ga,Mn)As layers when subjected to a swept, in-plane magnetic field. This giant planar Hall effect is 4 orders of magnitude greater than previously observed in metallic ferromagnets. This enables extremely sensitive measurements of the angle-dependent magnetic properties of (Ga,Mn)As. The magnetic anisotropy fields deduced from these measurements are compared with theoretical predictions.

Year:  2003        PMID： 12689027     DOI： 10.1103/PhysRevLett.90.107201

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


  13 in total

1.  Gate-tunable polarized phase of two-dimensional electrons at the LaAlO3/SrTiO3 interface.

Authors:  Arjun Joshua; Jonathan Ruhman; Sharon Pecker; Ehud Altman; Shahal Ilani
Journal:  Proc Natl Acad Sci U S A       Date:  2013-05-24       Impact factor: 11.205

2.  Hidden peculiar magnetic anisotropy at the interface in a ferromagnetic perovskite-oxide heterostructure.

Authors:  Le Duc Anh; Noboru Okamoto; Munetoshi Seki; Hitoshi Tabata; Masaaki Tanaka; Shinobu Ohya
Journal:  Sci Rep       Date:  2017-08-18       Impact factor: 4.379

3.  Non-volatile logic gates based on planar Hall effect in magnetic films with two in-plane easy axes.

Authors:  Sangyeop Lee; Seul-Ki Bac; Seonghoon Choi; Hakjoon Lee; Taehee Yoo; Sanghoon Lee; Xinyu Liu; M Dobrowolska; Jacek K Furdyna
Journal:  Sci Rep       Date:  2017-04-25       Impact factor: 4.379

4.  Free-Standing GaMnAs Nanomachined Sheets for van der Pauw Magnetotransport Measurements.

Authors:  Jae-Hyun Lee; Seondo Park; Chanuk Yang; Hyung Kook Choi; Myung Rae Cho; Sung Un Cho; Yun Daniel Park
Journal:  Micromachines (Basel)       Date:  2016-12-09       Impact factor: 2.891

5.  Fermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As.

Authors:  S Souma; L Chen; R Oszwałdowski; T Sato; F Matsukura; T Dietl; H Ohno; T Takahashi
Journal:  Sci Rep       Date:  2016-06-06       Impact factor: 4.379

6.  Observation of uniaxial anisotropy along the [100] direction in crystalline Fe film.

Authors:  Seul-Ki Bac; Hakjoon Lee; Sangyoep Lee; Seonghoon Choi; Taehee Yoo; Sanghoon Lee; X Liu; J K Furdyna
Journal:  Sci Rep       Date:  2015-12-04       Impact factor: 4.379

7.  Field-free manipulation of magnetization alignments in a Fe/GaAs/GaMnAs multilayer by spin-orbit-induced magnetic fields.

Authors:  Sangyeop Lee; Taehee Yoo; Seul-Ki Bac; Seonghoon Choi; Hakjoon Lee; Sanghoon Lee; Xinyu Liu; Margaret Dobrowolska; Jacek K Furdyna
Journal:  Sci Rep       Date:  2017-08-31       Impact factor: 4.379

8.  Magnetization reversal in trilayer structures consisting of GaMnAs layers with opposite signs of anisotropic magnetoresistance.

Authors:  Kyung Jae Lee; Sangyeop Lee; Seul-Ki Bac; Seonghoon Choi; Hakjoon Lee; Jihoon Chang; Suho Choi; Phunvira Chongthanaphisut; Sanghoon Lee; X Liu; M Dobrowolska; J K Furdyna
Journal:  Sci Rep       Date:  2018-02-02       Impact factor: 4.379

Review 9.  Mn-doped Ge and Si: A Review of the Experimental Status.

Authors:  Shengqiang Zhou; Heidemarie Schmidt
Journal:  Materials (Basel)       Date:  2010-11-26       Impact factor: 3.623

10.  Magnetization reversal and interlayer exchange coupling in ferromagnetic metal/semiconductor Fe/GaMnAs hybrid bilayers.

Authors:  Kritsanu Tivakornsasithorn; Taehee Yoo; Hakjoon Lee; Sangyeop Lee; Seonghoon Choi; Seul-Ki Bac; Kyung Jae Lee; Sanghoon Lee; Xinyu Liu; M Dobrowolska; Jacek K Furdyna
Journal:  Sci Rep       Date:  2018-07-12       Impact factor: 4.379
View more

北京卡尤迪生物科技股份有限公司 © 2022-2023.