InP(001)-(2 x 1) surface: a hydrogen stabilized structure.

The InP(001)(2 x 1) surface has been reported to consist of a semiconducting monolayer of buckled phosphorus dimers. This apparent violation of the electron counting principle was explained by effects of strong electron correlation. Combining first-principles calculations with reflectance anisotropy spectroscopy and LEED experiments, we find that the (2 x 1) reconstruction is not at all a clean surface: it is induced by hydrogen adsorbed in an alternating sequence on the buckled P dimers. Thus, the microscopic structure of the InP growth plane relevant to standard gas phase epitaxy conditions is resolved and shown to obey the electron counting rule.