| Literature DB >> 12225215 |
I Bozovic1, G Logvenov, I Belca, B Narimbetov, I Sveklo.
Abstract
The report that T(c) was doubled in underdoped La2-xSrxCuO4 films under compressive epitaxial strain has stirred great interest. We show that such films are extremely sensitive to oxygen intake, even at very low temperature, with startling consequences including colossal lattice expansion and a crossover from semiconductor to metallic behavior. We can bring T(c) up to 40 K in La2CuO4 films on SrTiO3 substrates-without any Sr doping and under tensile strain. On LaSrAlO4 substrates, we reached T(c)=51.5 K, the highest so far in La2-xSrxCuO4.Entities:
Year: 2002 PMID: 12225215 DOI: 10.1103/PhysRevLett.89.107001
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161