| Literature DB >> 12190493 |
S Misra1, S Oh, D J Hornbaker, T DiLuccio, J N Eckstein, A Yazdani.
Abstract
We have used a scanning tunneling microscope to demonstrate that a single CuO2 plane can form a stable and atomically ordered layer at the surface of Bi(2)Sr(2)CaCu(2)O(8+delta). In contrast to previous studies on high-T(c) surfaces, the CuO2-terminated surface exhibits a strongly suppressed tunneling conductance at low voltages. We consider a number of different explanations for this phenomena and propose that it may be caused by how the orbital symmetry of the CuO2 plane's electronic states affects the tunneling process.Entities:
Year: 2002 PMID: 12190493 DOI: 10.1103/PhysRevLett.89.087002
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161