Literature DB >> 12066180

Kondo resonance in a single-molecule transistor.

Wenjie Liang1, Matthew P Shores, Marc Bockrath, Jeffrey R Long, Hongkun Park.   

Abstract

When an individual molecule, nanocrystal, nanotube or lithographically defined quantum dot is attached to metallic electrodes via tunnel barriers, electron transport is dominated by single-electron charging and energy-level quantization. As the coupling to the electrodes increases, higher-order tunnelling and correlated electron motion give rise to new phenomena, including the Kondo resonance. To date, all of the studies of Kondo phenomena in quantum dots have been performed on systems where precise control over the spin degrees of freedom is difficult. Molecules incorporating transition-metal atoms provide powerful new systems in this regard, because the spin and orbital degrees of freedom can be controlled through well-defined chemistry. Here we report the observation of the Kondo effect in single-molecule transistors, where an individual divanadium molecule serves as a spin impurity. We find that the Kondo resonance can be tuned reversibly using the gate voltage to alter the charge and spin state of the molecule. The resonance persists at temperatures up to 30 K and when the energy separation between the molecular state and the Fermi level of the metal exceeds 100 meV.

Entities:  

Year:  2002        PMID: 12066180     DOI: 10.1038/nature00790

Source DB:  PubMed          Journal:  Nature        ISSN: 0028-0836            Impact factor:   49.962


  48 in total

1.  Discrete two-terminal single nanocluster quantum optoelectronic logic operations at room temperature.

Authors:  Tae-Hee Lee; Robert M Dickson
Journal:  Proc Natl Acad Sci U S A       Date:  2003-03-05       Impact factor: 11.205

2.  Two-channel Kondo effect and renormalization flow with macroscopic quantum charge states.

Authors:  Z Iftikhar; S Jezouin; A Anthore; U Gennser; F D Parmentier; A Cavanna; F Pierre
Journal:  Nature       Date:  2015-10-08       Impact factor: 49.962

3.  Electrical addressing of confined quantum systems for quasiclassical computation and finite state logic machines.

Authors:  F Remacle; J R Heath; R D Levine
Journal:  Proc Natl Acad Sci U S A       Date:  2005-04-08       Impact factor: 11.205

4.  Probing charge transport at the single-molecule level on silicon by using cryogenic ultra-high vacuum scanning tunneling microscopy.

Authors:  Nathan P Guisinger; Nathan L Yoder; Mark C Hersam
Journal:  Proc Natl Acad Sci U S A       Date:  2005-06-13       Impact factor: 11.205

5.  Tunneling rates in electron transport through double-barrier molecular junctions in a scanning tunneling microscope.

Authors:  G V Nazin; S W Wu; W Ho
Journal:  Proc Natl Acad Sci U S A       Date:  2005-06-14       Impact factor: 11.205

6.  Quantum criticality in ferromagnetic single-electron transistors.

Authors:  Stefan Kirchner; Lijun Zhu; Qimiao Si; D Natelson
Journal:  Proc Natl Acad Sci U S A       Date:  2005-12-14       Impact factor: 11.205

Review 7.  Single-molecule junctions beyond electronic transport.

Authors:  Sriharsha V Aradhya; Latha Venkataraman
Journal:  Nat Nanotechnol       Date:  2013-06       Impact factor: 39.213

8.  A current-driven single-atom memory.

Authors:  C Schirm; M Matt; F Pauly; J C Cuevas; P Nielaba; E Scheer
Journal:  Nat Nanotechnol       Date:  2013-09-01       Impact factor: 39.213

9.  Nanotechnology: Molecular transistors scrutinized.

Authors:  James Kushmerick
Journal:  Nature       Date:  2009-12-24       Impact factor: 49.962

10.  Observation of molecular orbital gating.

Authors:  Hyunwook Song; Youngsang Kim; Yun Hee Jang; Heejun Jeong; Mark A Reed; Takhee Lee
Journal:  Nature       Date:  2009-12-24       Impact factor: 49.962

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