Literature DB >> 12059373

A fourfold coordinated point defect in silicon.

Stefan Goedecker1, Thierry Deutsch, Luc Billard.   

Abstract

Vacancies, interstitials, and Frenkel pairs are considered to be the basic point defects in silicon. We challenge this point of view by presenting density functional calculations that show that there is a stable point defect in silicon that has fourfold coordination and is lower in energy than the traditional defects.

Entities:  

Year:  2002        PMID: 12059373     DOI: 10.1103/PhysRevLett.88.235501

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  1 in total

1.  A Theoretical Simulation of the Radiation Responses of Si, Ge, and Si/Ge Superlattice to Low-Energy Irradiation.

Authors:  Ming Jiang; Haiyan Xiao; Shuming Peng; Guixia Yang; Zijiang Liu; Liang Qiao; Xiaotao Zu
Journal:  Nanoscale Res Lett       Date:  2018-05-02       Impact factor: 4.703

  1 in total

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