| Literature DB >> 11909490 |
W G van der Wiel1, S De Franceschi, J M Elzerman, S Tarucha, L P Kouwenhoven, J Motohisa, F Nakajima, T Fukui.
Abstract
We report a strong Kondo effect (Kondo temperature approximately 4 K) at high magnetic field in a selective area growth semiconductor quantum dot. The Kondo effect is ascribed to a singlet-triplet transition in the ground state of the dot. At the transition, the low-temperature conductance approaches the unitary limit. Away from the transition, for low bias voltages and temperatures, the conductance is sharply reduced. The observed behavior is compared to predictions for a two-stage Kondo effect in quantum dots coupled to single-channel leads.Year: 2002 PMID: 11909490 DOI: 10.1103/PhysRevLett.88.126803
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161