Literature DB >> 11863827

First-principles surface phase diagram for hydrogen on GaN surfaces.

Chris G Van De Walle1, J Neugebauer.   

Abstract

We discuss the derivation and interpretation of a generalized surface phase diagram, based on first-principles density-functional calculations. Applying the approach to hydrogenated GaN surfaces, we find that the Gibbs free energies of relevant reconstructions strongly depend on temperature and pressure. Choosing chemical potentials as variables results in a phase diagram that provides immediate insight into the relative stability of different structures. A comparison with recent experiments illustrates the power of the approach for interpreting and predicting energetic and structural properties of surfaces under realistic growth conditions.

Entities:  

Year:  2002        PMID: 11863827     DOI: 10.1103/PhysRevLett.88.066103

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  3 in total

1.  Modeling the Non-Equilibrium Process of the Chemical Adsorption of Ammonia on GaN(0001) Reconstructed Surfaces Based on Steepest-Entropy-Ascent Quantum Thermodynamics.

Authors:  Akira Kusaba; Guanchen Li; Michael R von Spakovsky; Yoshihiro Kangawa; Koichi Kakimoto
Journal:  Materials (Basel)       Date:  2017-08-15       Impact factor: 3.623

Review 2.  Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach.

Authors:  Yoshihiro Kangawa; Toru Akiyama; Tomonori Ito; Kenji Shiraishi; Takashi Nakayama
Journal:  Materials (Basel)       Date:  2013-08-06       Impact factor: 3.623

3.  Effective chemical potential for non-equilibrium systems and its application to molecular beam epitaxy of Bi2Se3.

Authors:  Na Wang; Damien West; Wenhui Duan; S B Zhang
Journal:  Nanoscale Adv       Date:  2018-10-10
  3 in total

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