Jetlike component in sputtering of LiF induced by swift heavy ions.

Angular distributions of sputtered atoms from SiO2 and LiF single crystals were measured under the irradiation of 1 MeV/u swift heavy ions. In contrast to the almost isotropic distribution of SiO2, an additional jetlike component was observed for LiF. The total sputtering yield of SiO2 ( approximately 10(2) atoms/ion) can be reproduced by an extended inelastic thermal spike model, whereas the huge yield of LiF ( approximately 10(4) atoms/ion) needs a substantial decrease of the sublimation energy to be described by the model.