Literature DB >> 11851440

Effect of Strain on Structure and Morphology of Ultrathin Ge Films on Si(001).

Feng Liu1, Fang Wu, M. G. Lagally.   

Abstract

Year:  1997        PMID： 11851440     DOI： 10.1021/cr9600722

Source DB:  PubMed          Journal:  Chem Rev        ISSN： 0009-2665            Impact factor:   60.622


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  2 in total

1.  Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility.

Authors:  Vladimir A Yuryev; Larisa V Arapkina
Journal:  Nanoscale Res Lett       Date:  2011-09-05       Impact factor: 4.703

2.  Initial stage growth of GexSi1-x layers and Ge quantum dot formation on GexSi1-x surface by MBE.

Authors:  Aleksandr I Nikiforov; Vyacheslav A Timofeev; Serge A Teys; Anton K Gutakovsky; Oleg P Pchelyakov
Journal:  Nanoscale Res Lett       Date:  2012-10-09       Impact factor: 4.703
  2 in total

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