Literature DB >> 11801137

Hydrogen: a relevant shallow donor in zinc oxide.

Detlev M Hofmann1, Albrecht Hofstaetter, Frank Leiter, Huijuan Zhou, Frank Henecker, Bruno K Meyer, Sergei B Orlinskii, Jan Schmidt, Pavel G Baranov.   

Abstract

Electron paramagnetic resonance and Hall measurements show consistently the presence of two donors ( D1 and D2) in state-of-the-art, nominally undoped ZnO single crystals. Using electron nuclear double resonance it is found that D1 shows hyperfine interaction with more than 50 shells of surrounding 67Zn nuclei, proving that it is a shallow, effective-mass-like donor. In addition D1 exhibits a single interaction with a H nucleus ( a(H) = 1.4 MHz), thus H is the defining element. It is in agreement with the prediction of Van de Walle [Phys. Rev. Lett. 85, 1012 (2000)] that H acts as a donor in ZnO. The concentration of D1 is 6x10(16) cm(-3) emphasizing its relevance for carrier statistics and applications.

Entities:  

Year:  2002        PMID: 11801137     DOI: 10.1103/PhysRevLett.88.045504

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  15 in total

Review 1.  Point defects in ZnO: an approach from first principles.

Authors:  Fumiyasu Oba; Minseok Choi; Atsushi Togo; Isao Tanaka
Journal:  Sci Technol Adv Mater       Date:  2011-05-27       Impact factor: 8.090

2.  High-Frequency EPR and ENDOR Spectroscopy on Semiconductor Quantum Dots.

Authors:  Pavel G Baranov; Sergei B Orlinskii; Celso de Mello Donegá; Jan Schmidt
Journal:  Appl Magn Reson       Date:  2010-07-18       Impact factor: 0.831

3.  Efficient nitrogen incorporation in ZnO nanowires.

Authors:  Jan E Stehr; Weimin M Chen; Nandanapalli Koteeswara Reddy; Charles W Tu; Irina A Buyanova
Journal:  Sci Rep       Date:  2015-08-24       Impact factor: 4.379

4.  S-induced modifications of the optoelectronic properties of ZnO mesoporous nanobelts.

Authors:  Filippo Fabbri; Lucia Nasi; Paolo Fedeli; Patrizia Ferro; Giancarlo Salviati; Roberto Mosca; Arrigo Calzolari; Alessandra Catellani
Journal:  Sci Rep       Date:  2016-06-15       Impact factor: 4.379

5.  Fabrication of p-Type ZnO:N Films by Oxidizing Zn₃N₂ Films in Oxygen Plasma at Low Temperature.

Authors:  Yuping Jin; Nuannuan Zhang; Bin Zhang
Journal:  Materials (Basel)       Date:  2017-02-27       Impact factor: 3.623

6.  Creation of Negatively Charged Boron Vacancies in Hexagonal Boron Nitride Crystal by Electron Irradiation and Mechanism of Inhomogeneous Broadening of Boron Vacancy-Related Spin Resonance Lines.

Authors:  Fadis F Murzakhanov; Boris V Yavkin; Georgiy V Mamin; Sergei B Orlinskii; Ivan E Mumdzhi; Irina N Gracheva; Bulat F Gabbasov; Alexander N Smirnov; Valery Yu Davydov; Victor A Soltamov
Journal:  Nanomaterials (Basel)       Date:  2021-05-22       Impact factor: 5.076

7.  Well-width dependence of the emission linewidth in ZnO/MgZnO quantum wells.

Authors:  Xue-Qin Lv; Jiang-Yong Zhang; Lei-Ying Ying; Wen-Jie Liu; Xiao-Long Hu; Bao-Ping Zhang; Zhi-Ren Qiu; Shigeyuki Kuboya; Kentaro Onabe
Journal:  Nanoscale Res Lett       Date:  2012-10-31       Impact factor: 4.703

8.  Noble-metal-free plasmonic photocatalyst: hydrogen doped semiconductors.

Authors:  Xiangchao Ma; Ying Dai; Lin Yu; Baibiao Huang
Journal:  Sci Rep       Date:  2014-02-05       Impact factor: 4.379

9.  Free-Standing Undoped ZnO Microtubes with Rich and Stable Shallow Acceptors.

Authors:  Qiang Wang; Yinzhou Yan; Yong Zeng; Yue Lu; Liang Chen; Yijian Jiang
Journal:  Sci Rep       Date:  2016-06-06       Impact factor: 4.379

10.  Resistance Switching and Memristive Hysteresis in Visible-Light-Activated Adsorbed ZnO Thin Films.

Authors:  Benjamin Kerr Barnes; Kausik S Das
Journal:  Sci Rep       Date:  2018-02-01       Impact factor: 4.379

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