| Literature DB >> 11801033 |
Hidekazu Tanaka1, Jun Zhang, Tomoji Kawai.
Abstract
We report on the electrical modulation of double exchange ferromagnetism at room temperature in hole-doped manganites of a metal oxide p-n junction. In this (La0.9Ba0.1)MnO(3)/Nb doped SrTiO3 p-n junction, the temperature dependence of the junction resistance shows a metal-insulator transition whose temperature, corresponding to that of ferromagnetic transition, is hugely modulated from 290 to 340 K by a bias voltage increasing from +1.0 to +1.8 V. The magnetoresistance can also be modulated electrically.Entities:
Year: 2001 PMID: 11801033 DOI: 10.1103/PhysRevLett.88.027204
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161