Literature DB >> 11415413

Electroresistance and electronic phase separation in mixed-valent manganites.

T Wu1, S B Ogale, J E Garrison, B Nagaraj, A Biswas, Z Chen, R L Greene, R Ramesh, T Venkatesan, A J Millis.   

Abstract

The sensitivity of transport in colossal magnetoresistance (CMR) manganites to external electric and magnetic fields is examined using field effect configurations with La(0.7)Ca(0.3)MnO(3) (LCMO), Na(0.7)Sr(0.3)MnO(3), La(0.7)Ba(0.3)MnO(3), and La(0.5)Ca(0.5)MnO(3) (0.5-doped LCMO) channels, and ferroelectric PbZr(0.2)Ti(0.8)O(3) (PZT) or dielectric (SrTiO(3)) gates. A large electroresistance (ER) of approximately 76% at 4 x 10(5) V/cm is found in LCMO with PZT-ferroelectric gate, but the magnitude of the effect is much smaller (a few percent) in the other three channels. The ER and CMR effects are remarkably complimentary. The size and systematics of the effect strongly favor a percolative phase separation picture.

Entities:  

Year:  2001        PMID: 11415413     DOI: 10.1103/PhysRevLett.86.5998

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  4 in total

1.  Abnormal percolative transport and colossal electroresistance induced by anisotropic strain in (011)-Pr(0.7)(Ca(0.6)Sr(0.4))(0.3)MnO₃/PMN-PT heterostructure.

Authors:  Ying-Ying Zhao; Jing Wang; Hao Kuang; Feng-Xia Hu; Hong-Rui Zhang; Yao Liu; Ying Zhang; Shuan-Hu Wang; Rong-Rong Wu; Ming Zhang; Li-Fu Bao; Ji-Rong Sun; Bao-Gen Shen
Journal:  Sci Rep       Date:  2014-11-17       Impact factor: 4.379

Review 2.  Materials for a Sustainable Microelectronics Future: Electric Field Control of Magnetism with Multiferroics.

Authors:  R Ramesh
Journal:  J Indian Inst Sci       Date:  2022-01-11

3.  Nanoscale mechanical control of surface electrical properties of manganite films with magnetic nanoparticles.

Authors:  Borislav Vasić; Zorica Konstantinović; Elisa Pannunzio-Miner; Sergio Valencia; Radu Abrudan; Radoš Gajić; Alberto Pomar
Journal:  Nanoscale Adv       Date:  2019-02-21

4.  Positive-bias gate-controlled metal-insulator transition in ultrathin VO2 channels with TiO2 gate dielectrics.

Authors:  Takeaki Yajima; Tomonori Nishimura; Akira Toriumi
Journal:  Nat Commun       Date:  2015-12-14       Impact factor: 14.919

  4 in total

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