Literature DB >> 11415360

Electron-hole droplet formation in direct-gap semiconductors observed by mid-infrared pump-probe spectroscopy.

M Nagai1, R Shimano, M Kuwata-Gonokami.   

Abstract

Mid-infrared pump-probe measurements with subpicosecond time resolution reveal the existence of a metastable condensed phase of the electron-hole ensemble in a direct-gap semiconductor CuCl. High-density electrons and holes are directly created in a low-temperature state by the resonant femtosecond excitation of excitons above the Mott transition density. Strong metallic reflection with a plasma frequency Planck's over 2pi(omega)p approximately 0.5 eV builds up within 0.3 ps. Within a few picoseconds, the mid-infrared reflection spectrum is transformed from metalliclike into colloidlike. The observed resonance feature at Planck's over 2pi(omega)p/sqrt[3] allows us to obtain the carrier density in the metastable electron-hole droplets of 2x10(20) cm(-3).

Year:  2001        PMID: 11415360     DOI: 10.1103/PhysRevLett.86.5795

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  1 in total

1.  Polariton lasing vs. photon lasing in a semiconductor microcavity.

Authors:  Hui Deng; Gregor Weihs; David Snoke; Jacqueline Bloch; Yoshihisa Yamamoto
Journal:  Proc Natl Acad Sci U S A       Date:  2003-12-12       Impact factor: 11.205

  1 in total

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