E' centers in amorphous SiO(2) revisited: a new look at an old problem.

We present theoretical evidence that the paramagnetic E' defect centers in amorphous silicon dioxide (a-SiO(2)) do not have the same microscopic structures as those well-defined in the corresponding crystalline counterparts such as alpha-quartz. We then present alternative models of some paramagnetic defects that account for the underlying experimental features of the E'-center variants in a-SiO(2). We suggest that our new model should take the place of the conventional defect model of a-SiO(2).