| Literature DB >> 11397941 |
M H Huang1, S Mao, H Feick, H Yan, Y Wu, H Kind, E Weber, R Russo, P Yang.
Abstract
Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated. The self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process. These wide band-gap semiconductor nanowires form natural laser cavities with diameters varying from 20 to 150 nanometers and lengths up to 10 micrometers. Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission linewidth less than 0.3 nanometer. The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized laser light sources. These short-wavelength nanolasers could have myriad applications, including optical computing, information storage, and microanalysis.Entities:
Year: 2001 PMID: 11397941 DOI: 10.1126/science.1060367
Source DB: PubMed Journal: Science ISSN: 0036-8075 Impact factor: 47.728