Literature DB >> 11334167

Imaging conditions for reliable measurement of displacement and strain in high-resolution electron microscopy.

M J Hÿtch1, T Plamann.   

Abstract

We analyse the degree to which the lattice fringe displacements in an image correspond to displacements of the atomic planes in the specimen using lens transfer theory. Our basic assumption is that the exit wave function faithfully reproduces the displacements of the projected atomic structure. The way this information is imaged by the objective lens is then developed analytically. We observe an interchange of amplitude and phase information between the original and the reconstructed wave function. For symmetry-related reflections, we show that in the absence of beam amplitude variations, the displacements are imaged perfectly by the objective lens. The theoretical results are confirmed using one-dimensional simulations. For the more complicated case of non-centrosymmetric structures, beam tilts and crystal tilts, we study the implications for slowly varying displacement fields. Errors are found to be minimised in areas where the contrast of the lattice fringes is highest. Finally, we deduce from these theoretical results a number of practical rules.

Year:  2001        PMID: 11334167     DOI: 10.1016/s0304-3991(00)00099-1

Source DB:  PubMed          Journal:  Ultramicroscopy        ISSN: 0304-3991            Impact factor:   2.689


  8 in total

1.  Strain Relief Analysis of InN Quantum Dots Grown on GaN.

Authors:  Juan G Lozano; Ana M Sánchez; Rafael García; Sandra Ruffenach; Olivier Briot; David González
Journal:  Nanoscale Res Lett       Date:  2007-08-10       Impact factor: 4.703

2.  Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures.

Authors:  Daniel F Reyes; Faebian Bastiman; Chris J Hunter; David L Sales; Ana M Sanchez; John P R David; David González
Journal:  Nanoscale Res Lett       Date:  2014-01-13       Impact factor: 4.703

3.  Measurement of Diffusion and Segregation in Semiconductor Quantum Dots and Quantum Wells by Transmission Electron Microscopy: A Guide.

Authors:  Thomas Walther
Journal:  Nanomaterials (Basel)       Date:  2019-06-08       Impact factor: 5.076

4.  GaAs1-xBix growth on Ge: anti-phase domains, ordering, and exciton localization.

Authors:  Tadas Paulauskas; Vaidas Pačebutas; Andrejus Geižutis; Sandra Stanionytė; Evelina Dudutienė; Martynas Skapas; Arnas Naujokaitis; Viktorija Strazdienė; Bronislovas Čechavičius; Mária Čaplovičová; Viliam Vretenár; Rafał Jakieła; Arūnas Krotkus
Journal:  Sci Rep       Date:  2020-02-06       Impact factor: 4.379

Review 5.  Probing Multiscale Disorder in Pyrochlore and Related Complex Oxides in the Transmission Electron Microscope: A Review.

Authors:  Jenna L Wardini; Hasti Vahidi; Huiming Guo; William J Bowman
Journal:  Front Chem       Date:  2021-11-29       Impact factor: 5.221

6.  Effect of lattice mismatch and shell thickness on strain in core@shell nanocrystals.

Authors:  Jocelyn T L Gamler; Alberto Leonardi; Xiahan Sang; Kallum M Koczkur; Raymond R Unocic; Michael Engel; Sara E Skrabalak
Journal:  Nanoscale Adv       Date:  2020-03-02

7.  Self-organized Sr leads to solid state twinning in nano-scaled eutectic Si phase.

Authors:  M Albu; A Pal; C Gspan; R C Picu; F Hofer; G Kothleitner
Journal:  Sci Rep       Date:  2016-08-16       Impact factor: 4.379

8.  Accuracy of surface strain measurements from transmission electron microscopy images of nanoparticles.

Authors:  Jacob Madsen; Pei Liu; Jakob B Wagner; Thomas W Hansen; Jakob Schiøz
Journal:  Adv Struct Chem Imaging       Date:  2017-10-25
  8 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.