Literature DB >> 11290211

Spin relaxation quenching in semiconductor quantum dots.

M Paillard1, X Marie, P Renucci, T Amand, A Jbeli, J M Gérard.   

Abstract

We have studied the spin dynamics in self-organized InAs/GaAs quantum dots by time-resolved photoluminescence performed under strictly resonant excitation. At low temperature, we observe strictly no decay of both the linear and the circular luminescence polarization. This demonstrates that the carrier spins are totally frozen on the exciton lifetime scale.

Year:  2001        PMID： 11290211     DOI： 10.1103/PhysRevLett.86.1634

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


  4 in total

1.  The influence of surface trapping and dark states on the fluorescence emission efficiency and lifetime of CdSe and CdSe/ZnS quantum dots.

Authors:  Hong-Mei Gong; Zhang-Kai Zhou; Hao Song; Zhong-Hua Hao; Jun-Bo Han; Yue-Ying Zhai; Si Xiao; Qu-Quan Wang
Journal:  J Fluoresc       Date:  2007-08-10       Impact factor: 2.217

2.  A quantum light-emitting diode for the standard telecom window around 1,550 nm.

Authors:  T Müller; J Skiba-Szymanska; A B Krysa; J Huwer; M Felle; M Anderson; R M Stevenson; J Heffernan; D A Ritchie; A J Shields
Journal:  Nat Commun       Date:  2018-02-28       Impact factor: 14.919

3.  Electric-Field-Effect Spin Switching with an Enhanced Number of Highly Polarized Electron and Photon Spins Using p-Doped Semiconductor Quantum Dots.

Authors:  Soyoung Park; Hang Chen; Satoshi Hiura; Junichi Takayama; Kazuhisa Sueoka; Akihiro Murayama
Journal:  ACS Omega       Date:  2021-03-15

4.  Spin accumulation assisted by the Aharonov-Bohm-Fano effect of quantum dot structures.

Authors:  Wei-Jiang Gong; Yu Han; Guo-Zhu Wei; An Du
Journal:  Nanoscale Res Lett       Date:  2012-09-17       Impact factor: 4.703
  4 in total

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