| Literature DB >> 11289996 |
X G Feng1, D Popović, S Washburn, V Dobrosavljević.
Abstract
Experiments on a sufficiently disordered two-dimensional (2D) electron system in silicon reveal a new and unexpected kind of metallic behavior, where the conductivity decreases as sigma(n(s),T) = sigma(n(s),T = 0)+A(n(s))T(2) (where n(s) is carrier density) to a nonzero value as temperature T-->0. In 2D, the existence of a metal with dsigma/dT>0 is very surprising. In addition, a novel type of a metal-insulator transition obtains, which is unlike any known quantum phase transition in 2D.Entities:
Year: 2001 PMID: 11289996 DOI: 10.1103/PhysRevLett.86.2625
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161