Enhancement of tunneling from a correlated 2D electron system by a many-electron Mössbauer-type recoil in a magnetic field.

We consider the effect of electron correlations on tunneling from a 2D electron layer in a magnetic field parallel to the layer. A tunneling electron can exchange its momentum with other electrons, which leads to an exponential increase of the tunneling rate compared to the single-electron approximation. The effect depends on the interrelation between the dynamics of tunneling and momentum exchange. The results explain and provide a no-parameter fit to the data on electrons on helium. We also discuss tunneling in semiconductor heterostructures.