Literature DB >> 11102230

Scaling law of resistance fluctuations in stationary random resistor networks

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Abstract

In a random resistor network we consider the simultaneous evolution of two competing random processes consisting in breaking and recovering the elementary resistors with probabilities W(D) and W(R). The condition W(R)>W(D)/(1+W(D)) leads to a stationary state, while in the opposite case, the broken resistor fraction reaches the percolation threshold p(c). We study the resistance noise of this system under stationary conditions by Monte Carlo simulations. The variance of resistance fluctuations <deltaR2> is found to follow a scaling law |p-p(c)|(-kappa(0)) with kappa(0) = 5.5. The proposed model relates quantitatively the defectiveness of a disordered media with its electrical and excess-noise characteristics.

Entities:  

Year:  2000        PMID: 11102230     DOI: 10.1103/PhysRevLett.85.5238

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  1 in total

1.  Nanoscale enhancement of photoconductivity by localized charge traps in the grain structures of monolayer MoS2.

Authors:  Myungjae Yang; Tae-Young Kim; Takhee Lee; Seunghun Hong
Journal:  Sci Rep       Date:  2018-10-25       Impact factor: 4.379

  1 in total

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