| Literature DB >> 11038579 |
Abstract
Recent experimental data on the conductivity final sigma+(T), T --> 0, on the metallic side of the metal-insulator transition in ideally random (neutron transmutation-doped) 70Ge:Ga have shown that final sigma+(0) ~ (N - Nc)mu with mu = (1/2), confirming earlier ultra-low-temperature results for Si:P. This value is inconsistent with theoretical predictions based on diffusive classical scaling models, but it can be understood by a quantum-directed percolative filamentary amplitude model in which electronic basis states exist which have a well-defined momentum parallel but not normal to the applied electric field. The model, which is based on a new kind of broken symmetry, also explains the anomalous sign reversal of the derivative of the temperature dependence in the critical regime.Year: 1997 PMID: 11038579 PMCID: PMC23393 DOI: 10.1073/pnas.94.20.10528
Source DB: PubMed Journal: Proc Natl Acad Sci U S A ISSN: 0027-8424 Impact factor: 11.205