| Literature DB >> 11030924 |
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Abstract
Hydrogen-terminated diamond exhibits a high surface conductivity (SC) that is commonly attributed to the direct action of hydrogen-related acceptors. We give experimental evidence that hydrogen is only a necessary requirement for SC; exposure to air is also essential. We propose a mechanism in which a redox reaction in an adsorbed water layer provides the electron sink for the subsurface hole accumulation layer. The model explains the experimental findings including the fact that hydrogenated diamond is unique among all semiconductors in this respect.Entities:
Year: 2000 PMID: 11030924 DOI: 10.1103/PhysRevLett.85.3472
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161