Literature DB >> 11018975

Defects, quasibound states, and quantum conductance in metallic carbon nanotubes

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Abstract

The effects of impurities and local structural defects on the conductance of metallic carbon nanotubes are calculated using an ab initio pseudopotential method within the Landauer formalism. Substitutionally doped boron or nitrogen produces quasibound impurity states of a definite parity and reduces the conductance by a quantum unit (2e(2)/h) via resonant backscattering. These resonant states show strong similarity to acceptor or donor states in semiconductors. The Stone-Wales defect also produces quasibound states and exhibits quantized conductance reduction. In the case of a vacancy, the conductance shows a much more complex behavior than the prediction from the widely used pi-electron tight-binding model.

Entities:  

Year:  2000        PMID: 11018975     DOI: 10.1103/PhysRevLett.84.2917

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  6 in total

1.  Electronic structures and three-dimensional effects of boron-doped carbon nanotubes.

Authors:  Takashi Koretsune; Susumu Saito
Journal:  Sci Technol Adv Mater       Date:  2009-01-28       Impact factor: 8.090

Review 2.  Tunable electronic and magnetic properties of two-dimensional materials and their one-dimensional derivatives.

Authors:  Zhuhua Zhang; Xiaofei Liu; Jin Yu; Yang Hang; Yao Li; Yufeng Guo; Ying Xu; Xu Sun; Jianxin Zhou; Wanlin Guo
Journal:  Wiley Interdiscip Rev Comput Mol Sci       Date:  2016-03-15

3.  Growth of Single-Walled Carbon Nanotubes from Solid Carbon Nanoparticle Seeds via Cap Formation Engineering with a Two-Step Growth Process and Water Vapor Supply.

Authors:  Mengyue Wang; Keisuke Nakamura; Michiharu Arifuku; Noriko Kiyoyanagi; Taiki Inoue; Yoshihiro Kobayashi
Journal:  ACS Omega       Date:  2022-01-20

Review 4.  Critical challenges and advances in the carbon nanotube-metal interface for next-generation electronics.

Authors:  Farhad Daneshvar; Hengxi Chen; Kwanghae Noh; Hung-Jue Sue
Journal:  Nanoscale Adv       Date:  2021-01-06

5.  Conductance Quantization in Resistive Random Access Memory.

Authors:  Yang Li; Shibing Long; Yang Liu; Chen Hu; Jiao Teng; Qi Liu; Hangbing Lv; Jordi Suñé; Ming Liu
Journal:  Nanoscale Res Lett       Date:  2015-10-26       Impact factor: 4.703

6.  Effect of the Channel Length on the Transport Characteristics of Transistors Based on Boron-Doped Graphene Ribbons.

Authors:  Paolo Marconcini; Alessandro Cresti; Stephan Roche
Journal:  Materials (Basel)       Date:  2018-04-25       Impact factor: 3.623

  6 in total

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