Literature DB >> 11018917

Weak localization, hole-hole interactions, and the "Metal"-insulator transition in two dimensions

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Abstract

A detailed investigation of the metallic behavior in high-quality GaAs-AlGaAs two-dimensional hole systems reveals the presence of quantum corrections to the resistivity at low temperatures. Despite the low density ( r(s)>10) and high quality of these systems, both weak localization (observed via negative magnetoresistance) and weak hole-hole interactions (giving a correction to the Hall constant) are present in the so-called metallic phase where the resistivity decreases with decreasing temperature. If these quantum corrections persist down to T = 0, the results suggest that even at high r(s) there is no metallic phase in two dimensions.

Entities:  

Year:  2000        PMID: 11018917     DOI: 10.1103/PhysRevLett.84.2489

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  7 in total

1.  Temperature dependence of electron density and electron-electron interactions in monolayer epitaxial graphene grown on SiC.

Authors:  Chieh-Wen Liu; Chiashain Chuang; Yanfei Yang; Randolph E Elmquist; Yi-Ju Ho; Hsin-Yen Lee; Chi-Te Liang
Journal:  2d Mater       Date:  2017-01-25       Impact factor: 7.103

2.  Disordered RuO2 exhibits two dimensional, low-mobility transport and a metal-insulator transition.

Authors:  M S Osofsky; C M Krowne; K M Charipar; K Bussmann; C N Chervin; I R Pala; D R Rolison
Journal:  Sci Rep       Date:  2016-02-26       Impact factor: 4.379

3.  Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers.

Authors:  Saquib Shamim; S Mahapatra; G Scappucci; W M Klesse; M Y Simmons; Arindam Ghosh
Journal:  Sci Rep       Date:  2017-05-04       Impact factor: 4.379

4.  Soft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS2.

Authors:  Byoung Hee Moon; Jung Jun Bae; Min-Kyu Joo; Homin Choi; Gang Hee Han; Hanjo Lim; Young Hee Lee
Journal:  Nat Commun       Date:  2018-05-24       Impact factor: 14.919

5.  Electron transport in a GaPSb film.

Authors:  Shun-Tsung Lo; Hung En Lin; Shu-Wei Wang; Huang-De Lin; Yu-Chung Chin; Hao-Hsiung Lin; Jheng-Cyuan Lin; Chi-Te Liang
Journal:  Nanoscale Res Lett       Date:  2012-11-23       Impact factor: 4.703

6.  Screening and transport in 2D semiconductor systems at low temperatures.

Authors:  S Das Sarma; E H Hwang
Journal:  Sci Rep       Date:  2015-11-17       Impact factor: 4.379

7.  Tunable insulator-quantum Hall transition in a weakly interacting two-dimensional electron system.

Authors:  Shun-Tsung Lo; Yi-Ting Wang; Sheng-Di Lin; Gottfried Strasser; Jonathan P Bird; Yang-Fang Chen; Chi-Te Liang
Journal:  Nanoscale Res Lett       Date:  2013-07-03       Impact factor: 4.703

  7 in total

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