Literature DB >> 11017369

Direct measurement of valence-charge asymmetry by x-ray standing waves.

J C Woicik1, E J Nelson, P Pianetta.   

Abstract

By monitoring valence-photoelectron emission under condition of strong x-ray Bragg reflection, we have determined that a majority of GaAs valence charge resides on the anion sites of this heteropolar crystal, in quantitative agreement with the GaAs bond polarity as calculated from the Hartree-Fock term values. In contrast, the valence-charge distribution in Ge is found to be symmetric. In both cases, the valence emission is found to be closely coupled to the atomic cores.

Year:  2000        PMID: 11017369     DOI: 10.1103/PhysRevLett.84.773

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  1 in total

1.  Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide.

Authors:  Slavomír Nemšák; Mathias Gehlmann; Cheng-Tai Kuo; Shih-Chieh Lin; Christoph Schlueter; Ewa Mlynczak; Tien-Lin Lee; Lukasz Plucinski; Hubert Ebert; Igor Di Marco; Ján Minár; Claus M Schneider; Charles S Fadley
Journal:  Nat Commun       Date:  2018-08-17       Impact factor: 14.919

  1 in total

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