General characteristics of the use of silicon diode detectors for clinical dosimetry in proton beams.

The properties of silicon diode detectors, used for dosimetry in clinical proton beams, were investigated with special regard to the measurement of relative dose distributions in water. Different types of silicon diode detector were studied, and the resulting distributions of detector signal versus depth in the water phantom were compared with the corresponding distributions obtained with a plane-parallel NACP ionization chamber. The measurements were performed in a proton beam with an initial energy of 173 MeV. It is shown that the Hi-p silicon detector gives a signal which is proportional to the ionization density in the silicon crystal in all parts of the Bragg curve, and for all levels of accumulated dose to the detector. This is in contrast to detectors based on n-type silicon, or on low resistivity p-type silicon. After pre-irradiation, these latter detectors show a stopping-power dependent recombination, yielding an increase in the detector signal per unit dose with increasing LET. This effect leads to an over-response in the Bragg peak, which increases gradually with the accumulated detector dose. Using the Hi-p silicon diode detector, the depth ionization distribution was found to be equal to the distribution obtained with the plane-parallel NACP ionization chamber at all pre-irradiation levels, within the experimental accuracy. This implies that the quotient between the ionization in the detector and the absorbed dose to the surrounding water is equal for these detectors.