Literature DB >> 10991533

Wetting layer thickness and early evolution of epitaxially strained thin films

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Abstract

We propose a physical model which explains the existence of finite thickness wetting layers in epitaxially strained films. The finite wetting layer is shown to be stable due to the variation of the nonlinear elastic free energy with film thickness. We show that anisotropic surface tension gives rise to a metastable enlarged wetting layer. The perturbation amplitude needed to destabilize this wetting layer decreases with increasing lattice mismatch. We observe the development of faceted islands in unstable films.

Year:  2000        PMID: 10991533     DOI: 10.1103/PhysRevLett.85.1286

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  1 in total

1.  Multiscale Kinetic Monte Carlo Simulation of Self-Organized Growth of GaN/AlN Quantum Dots.

Authors:  Jorge A Budagosky; Alberto García-Cristóbal
Journal:  Nanomaterials (Basel)       Date:  2022-09-02       Impact factor: 5.719

  1 in total

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