Literature DB >> 10991278

Strain-mediated phase coexistence in heteroepitaxial films

.   

Abstract

We present experimental evidence of the equilibrium coexistence between crystalline phases in heteroepitaxial films of MnAs on GaAs. The phases, which can coexist in the bulk system only at one temperature point, coexist in the epitaxial film over a wide temperature interval. An apparent contradiction with the Gibbs phase rule is resolved by the presence of strain in the film.

Year:  2000        PMID: 10991278     DOI: 10.1103/PhysRevLett.85.341

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  3 in total

1.  Finite size effect on the structural and magnetic properties of MnAs/GaAs(001) patterned microstructures thin films.

Authors:  Cristian Mocuta; Daniel Bonamy; Stefan Stanescu; Souliman El Moussaoui; Antoine Barbier; François Montaigne; Francesco Maccherozzi; Ernst Bauer; Rachid Belkhou
Journal:  Sci Rep       Date:  2017-12-05       Impact factor: 4.379

2.  Inhomogeneous spatial distribution of the magnetic transition in an iron-rhodium thin film.

Authors:  C Gatel; B Warot-Fonrose; N Biziere; L A Rodríguez; D Reyes; R Cours; M Castiella; M J Casanove
Journal:  Nat Commun       Date:  2017-06-07       Impact factor: 14.919

3.  Nucleation and strain-stabilization during organic semiconductor thin film deposition.

Authors:  Yang Li; Jing Wan; Detlef-M Smilgies; Nicole Bouffard; Richard Sun; Randall L Headrick
Journal:  Sci Rep       Date:  2016-09-07       Impact factor: 4.379

  3 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.