Literature DB >> 10991233

Direct calculation of light-induced structural change and diffusive motion in glassy As2Se3

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Abstract

Photostructural change of glassy As2Se3 was simulated on an experimentally credible model with excited electronic dynamics within first-principles molecular dynamics. Bond breaking and bond switching reactions account for local changes around defect sites at the short time phase of illumination. For long-time relaxation, defect pairs associated with band tail states become involved in a rearrangement in the network, giving rise to a low energy, nonlocal "polaronlike" collective oscillation. Diffusive motion is observed for short times, which we tentatively interpret as the initial phase of athermal photomelting.

Year:  2000        PMID: 10991233     DOI: 10.1103/PhysRevLett.85.2785

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  3 in total

1.  Ultrafast light induced unusually broad transient absorption in the sub-bandgap region of GeSe2 thin film.

Authors:  A R Barik; Mukund Bapna; D A Drabold; K V Adarsh
Journal:  Sci Rep       Date:  2014-01-14       Impact factor: 4.379

2.  Understanding Phase-Change Memory Alloys from a Chemical Perspective.

Authors:  A V Kolobov; P Fons; J Tominaga
Journal:  Sci Rep       Date:  2015-09-01       Impact factor: 4.379

3.  Nanosecond light induced, thermally tunable transient dual absorption bands in a-Ge₅As₃₀Se₆₅ thin film.

Authors:  Pritam Khan; Tarun Saxena; H Jain; K V Adarsh
Journal:  Sci Rep       Date:  2014-10-10       Impact factor: 4.379

  3 in total

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