Literature DB >> 10990694

Structure and energetics of the Si- SiO2 interface

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Abstract

Using a Monte Carlo approach, we identify low-energy structures for the (001)-oriented Si-SiO2 interface. The optimal interface structure found consists of an ordered array of Si-O-Si "bridges," with low strain energy. This structure explains several puzzling experimental observations.

Entities:  

Year:  2000        PMID: 10990694     DOI: 10.1103/PhysRevLett.84.4393

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  1 in total

1.  Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface.

Authors:  Kengo Nishio; Tomoe Yayama; Takehide Miyazaki; Noriyuki Taoka; Mitsuaki Shimizu
Journal:  Sci Rep       Date:  2018-01-23       Impact factor: 4.379

  1 in total

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