Literature DB >> 10970655

Evidence of a reentrant peierls distortion in liquid GeTe

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Abstract

The local atomic order of semiconducting liquid GeTe is studied using first-principles molecular-dynamics simulations. Our work points out a high degree of alternating chemical order in the liquid and demonstrates the presence of a Peierls distortion close above the melting temperature. This distortion, absent in the high temperature crystalline structure of NaCl type, is a remnant of the atomic arrangement in the A7 low temperature crystalline phase. It disappears slowly with temperature, as the liquid evolves from a semiconducting to a metallic state.

Entities:  

Year:  2000        PMID: 10970655     DOI: 10.1103/PhysRevLett.85.1950

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  4 in total

1.  Peierls distortion mediated reversible phase transition in GeTe under pressure.

Authors:  Zhimei Sun; Jian Zhou; Ho-Kwang Mao; Rajeev Ahuja
Journal:  Proc Natl Acad Sci U S A       Date:  2012-04-02       Impact factor: 11.205

2.  Structural, electronic and kinetic properties of the phase-change material Ge2Sb2Te5 in the liquid state.

Authors:  Mathias Schumacher; Hans Weber; Pál Jóvári; Yoshimi Tsuchiya; Tristan G A Youngs; Ivan Kaban; Riccardo Mazzarello
Journal:  Sci Rep       Date:  2016-06-08       Impact factor: 4.379

3.  Structural disorder in the high-temperature cubic phase of GeTe.

Authors:  Ming Xu; Zhenyu Lei; Junhui Yuan; Kanhao Xue; Yanrong Guo; Songyou Wang; Xiangshui Miao; Riccardo Mazzarello
Journal:  RSC Adv       Date:  2018-05-11       Impact factor: 4.036

4.  Ordered Peierls distortion prevented at growth onset of GeTe ultra-thin films.

Authors:  Ruining Wang; Davide Campi; Marco Bernasconi; Jamo Momand; Bart J Kooi; Marcel A Verheijen; Matthias Wuttig; Raffaella Calarco
Journal:  Sci Rep       Date:  2016-09-09       Impact factor: 4.379

  4 in total

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