Literature DB >> 10583951

Transition States Between Pyramids and Domes During Ge/Si Island Growth.

.   

Abstract

Real-time observations were made of the shape change from pyramids to domes during the growth of germanium-silicon islands on silicon (001). Small islands are pyramidal in shape, whereas larger islands are dome-shaped. During growth, the transition from pyramids to domes occurs through a series of asymmetric transition states with increasing numbers of highly inclined facets. Postgrowth annealing of pyramids results in a similar shape change process. The transition shapes are temperature dependent and transform reversibly to the final dome shape during cooling. These results are consistent with an anomalous coarsening model for island growth.

Entities:  

Year:  1999        PMID: 10583951     DOI: 10.1126/science.286.5446.1931

Source DB:  PubMed          Journal:  Science        ISSN: 0036-8075            Impact factor:   47.728


  14 in total

1.  Asymmetric shape transitions of epitaxial quantum dots.

Authors:  Chaozhen Wei; Brian J Spencer
Journal:  Proc Math Phys Eng Sci       Date:  2016-06       Impact factor: 2.704

2.  A Fokker-Planck reaction model for the epitaxial growth and shape transition of quantum dots.

Authors:  Chaozhen Wei; Brian J Spencer
Journal:  Proc Math Phys Eng Sci       Date:  2017-10-18       Impact factor: 2.704

3.  Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands.

Authors:  M Brehm; M Grydlik; F Hackl; E Lausecker; T Fromherz; G Bauer
Journal:  Nanoscale Res Lett       Date:  2010-08-05       Impact factor: 4.703

4.  Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001).

Authors:  R Bergamaschini; F Montalenti; L Miglio
Journal:  Nanoscale Res Lett       Date:  2010-08-06       Impact factor: 4.703

5.  Unusual layer-by-layer growth of epitaxial oxide islands during Cu oxidation.

Authors:  Meng Li; Matthew T Curnan; Michael A Gresh-Sill; Stephen D House; Wissam A Saidi; Judith C Yang
Journal:  Nat Commun       Date:  2021-05-13       Impact factor: 14.919

6.  Growth of GeSi nanoislands on nanotip-patterned Si (100) substrates with a stress-induced self-limiting interdiffusion.

Authors:  Ruifan Tang; Kai Huang; Hongkai Lai; Cheng Li; Zhiming Wu; Junyong Kang
Journal:  Nanoscale Res Lett       Date:  2012-06-26       Impact factor: 4.703

7.  Size Evolution of Ordered SiGe Islands Grown by Surface Thermal Diffusion on Pit-Patterned Si(100) Surface.

Authors:  Giovanni Maria Vanacore; Maurizio Zani; Monica Bollani; Davide Colombo; Giovanni Isella; Johann Osmond; Roman Sordan; Alberto Tagliaferri
Journal:  Nanoscale Res Lett       Date:  2010-09-30       Impact factor: 4.703

8.  X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor.

Authors:  Nina Hrauda; Jianjun Zhang; Eugen Wintersberger; Tanja Etzelstorfer; Bernhard Mandl; Julian Stangl; Dina Carbone; Vaclav Holý; Vladimir Jovanović; Cleber Biasotto; Lis K Nanver; Jürgen Moers; Detlev Grützmacher; Günther Bauer
Journal:  Nano Lett       Date:  2011-05-31       Impact factor: 11.189

9.  A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates.

Authors:  Zhenyang Zhong; Hua Gong; Yingjie Ma; Yongliang Fan; Zuimin Jiang
Journal:  Nanoscale Res Lett       Date:  2011-04-11       Impact factor: 4.703

10.  Morphological evolution of Ge/Si(001) quantum dot rings formed at the rim of wet-etched pits.

Authors:  Martyna Grydlik; Moritz Brehm; Friedrich Schäffler
Journal:  Nanoscale Res Lett       Date:  2012-10-30       Impact factor: 4.703

View more

北京卡尤迪生物科技股份有限公司 © 2022-2023.