Literature DB >> 10062475

Epitaxial Growth of SiO2 Produced in Silicon by Oxygen Ion Implantation.

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Abstract

Entities:  

Year:  1996        PMID： 10062475     DOI： 10.1103/PhysRevLett.77.4206

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


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  1 in total

1.  Temperature-Dependent HfO2/Si Interface Structural Evolution and its Mechanism.

Authors:  Xiao-Ying Zhang; Chia-Hsun Hsu; Shui-Yang Lien; Wan-Yu Wu; Sin-Liang Ou; Song-Yan Chen; Wei Huang; Wen-Zhang Zhu; Fei-Bing Xiong; Sam Zhang
Journal:  Nanoscale Res Lett       Date:  2019-03-07       Impact factor: 4.703
  1 in total

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