Literature DB >> 10061782

Inversion Domain and Stacking Mismatch Boundaries in GaN.

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Abstract

Year:  1996        PMID： 10061782     DOI： 10.1103/PhysRevLett.77.103

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


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  3 in total

1.  The role of Si in GaN/AlN/Si(111) plasma assisted molecular beam epitaxy: polarity and inversion.

Authors:  Alexana Roshko; Matthew Brubaker; Paul Blanchard; Todd Harvey; Kris Bertness
Journal:  Jpn J Appl Phys (2008)       Date:  2019-05-22       Impact factor: 1.480

2.  Effect of screw threading dislocations and inverse domain boundaries in GaN on the shape of reciprocal-space maps.

Authors:  Mykhailo Barchuk; Mykhaylo Motylenko; Gleb Lukin; Olf Pätzold; David Rafaja
Journal:  J Appl Crystallogr       Date:  2017-03-22       Impact factor: 3.304

3.  Investigation of the non-volatile resistance change in noncentrosymmetric compounds.

Authors:  T S Herng; A Kumar; C S Ong; Y P Feng; Y H Lu; K Y Zeng; J Ding
Journal:  Sci Rep       Date:  2012-08-17       Impact factor: 4.379
  3 in total

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