Literature DB >> 10060889

Interplay of stress, structure, and stoichiometry in Ge-covered Si(001).

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Abstract

Year:  1996        PMID： 10060889     DOI： 10.1103/PhysRevLett.76.3156

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


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  1 in total

1.  A Synchrotron Radiation Photoemission Study of SiGe(001)-2×1 Grown on Ge and Si Substrates: The Surface Electronic Structure for Various Ge Concentrations.

Authors:  Yi-Ting Cheng; Hsien-Wen Wan; Jueinai Kwo; Minghwei Hong; Tun-Wen Pi
Journal:  Nanomaterials (Basel)       Date:  2022-04-11       Impact factor: 5.719
  1 in total

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