Literature DB >> 10059912

Hydrogen in GaN: Novel aspects of a common impurity.

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Abstract

Entities:  

Year:  1995        PMID： 10059912     DOI： 10.1103/PhysRevLett.75.4452

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


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  5 in total

1.  Theory of hydrogen migration in organic-inorganic halide perovskites.

Authors:  David A Egger; Leeor Kronik; Andrew M Rappe
Journal:  Angew Chem Int Ed Engl       Date:  2015-06-12       Impact factor: 15.336

2.  Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides.

Authors:  Zhiqiang Liu; Yang Huang; Xiaoyan Yi; Binglei Fu; Guodong Yuan; Junxi Wang; Jinmin Li; Yong Zhang
Journal:  Sci Rep       Date:  2016-08-23       Impact factor: 4.379

3.  Interaction between hydrogen and gallium vacancies in β-Ga2O3.

Authors:  Yidan Wei; Xingji Li; Jianqun Yang; Chaoming Liu; Jinyu Zhao; Yong Liu; Shangli Dong
Journal:  Sci Rep       Date:  2018-07-04       Impact factor: 4.379

4.  Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate.

Authors:  Kexiong Zhang; Hongwei Liang; Yang Liu; Rensheng Shen; Wenping Guo; Dongsheng Wang; Xiaochuan Xia; Pengcheng Tao; Chao Yang; Yingmin Luo; Guotong Du
Journal:  Sci Rep       Date:  2014-09-10       Impact factor: 4.379

5.  Investigation on thermodynamics of ion-slicing of GaN and heterogeneously integrating high-quality GaN films on CMOS compatible Si(100) substrates.

Authors:  Kai Huang; Qi Jia; Tiangui You; Runchun Zhang; Jiajie Lin; Shibin Zhang; Min Zhou; Bo Zhang; Wenjie Yu; Xin Ou; Xi Wang
Journal:  Sci Rep       Date:  2017-11-08       Impact factor: 4.379
  5 in total

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