Literature DB >> 10058941

Surface morphology during multilayer epitaxial growth of Ge(001).

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Abstract

Year:  1995        PMID： 10058941     DOI： 10.1103/PhysRevLett.74.1127

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


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  2 in total

1.  Beneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires.

Authors:  Luca Persichetti; Anna Sgarlata; Stefano Mori; Marco Notarianni; Valeria Cherubini; Massimo Fanfoni; Nunzio Motta; Adalberto Balzarotti
Journal:  Nanoscale Res Lett       Date:  2014-07-16       Impact factor: 4.703

2.  Defect-free high Sn-content GeSn on insulator grown by rapid melting growth.

Authors:  Zhi Liu; Hui Cong; Fan Yang; Chuanbo Li; Jun Zheng; Chunlai Xue; Yuhua Zuo; Buwen Cheng; Qiming Wang
Journal:  Sci Rep       Date:  2016-12-12       Impact factor: 4.379
  2 in total

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