Warning: Undefined array key "mm" in /www/wwwroot/www.ai-bt.com/si.php on line 10 Deprecated: trim(): Passing null to parameter #1 ($string) of type string is deprecated in /www/wwwroot/www.ai-bt.com/si.php on line 10 Temperature dependence of the electron Landé g factor in GaAs.

Literature DB >> 10057897

Temperature dependence of the electron Landé g factor in GaAs.

Abstract

Year: 1995 PMID： 10057897 DOI： 10.1103/PhysRevLett.74.2315

Source DB: PubMed Journal: Phys Rev Lett ISSN： 0031-9007 Impact factor: 9.161

Keyword Cloud
Cited

× No keyword cloud information.

3 in total

1. Anisotropic in-plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well.

Authors: Huiqi Ye; Changcheng Hu; Gang Wang; Hongming Zhao; Haitao Tian; Xiuwen Zhang; Wenxin Wang; Baoli Liu
Journal: Nanoscale Res Lett Date: 2011-09-02 Impact factor: 4.703

2. Sub-picosecond temporal resolution of anomalous Hall currents in GaAs.

Authors: Christian B Schmidt; Shekhar Priyadarshi; Mark Bieler
Journal: Sci Rep Date: 2017-09-11 Impact factor: 4.379

3. Zeeman splitting via spin-valley-layer coupling in bilayer MoTe₂.

Authors: Chongyun Jiang; Fucai Liu; Jorge Cuadra; Zumeng Huang; Ke Li; Abdullah Rasmita; Ajit Srivastava; Zheng Liu; Wei-Bo Gao
Journal: Nat Commun Date: 2017-10-06 Impact factor: 14.919

3 in total

Temperature dependence of the electron Landé g factor in GaAs.

1. Anisotropic in-plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well.

2. Sub-picosecond temporal resolution of anomalous Hall currents in GaAs.

3. Zeeman splitting via spin-valley-layer coupling in bilayer MoTe2.

3. Zeeman splitting via spin-valley-layer coupling in bilayer MoTe₂.