Literature DB >> 10055728

Identification of the dominant nitrogen defect in silicon.

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Abstract

Entities:  

Year:  1994        PMID： 10055728     DOI： 10.1103/PhysRevLett.72.1882

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


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  2 in total

1.  Electronic Band Structure and Sub-band-gap Absorption of Nitrogen Hyperdoped Silicon.

Authors:  Zhen Zhu; Hezhu Shao; Xiao Dong; Ning Li; Bo-Yuan Ning; Xi-Jing Ning; Li Zhao; Jun Zhuang
Journal:  Sci Rep       Date:  2015-05-27       Impact factor: 4.379

2.  On the insulator-to-metal transition in titanium-implanted silicon.

Authors:  Fang Liu; Mao Wang; Yonder Berencén; Slawomir Prucnal; Martin Engler; René Hübner; Ye Yuan; René Heller; Roman Böttger; Lars Rebohle; Wolfgang Skorupa; Manfred Helm; Shengqiang Zhou
Journal:  Sci Rep       Date:  2018-03-07       Impact factor: 4.379
  2 in total

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