Literature DB >> 10055469

Observation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAs.

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Abstract

Entities:  

Year:  1993        PMID： 10055469     DOI： 10.1103/PhysRevLett.71.1176

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


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  2 in total

1.  Characterization and manipulation of individual defects in insulating hexagonal boron nitride using scanning tunnelling microscopy.

Authors:  Dillon Wong; Jairo Velasco; Long Ju; Juwon Lee; Salman Kahn; Hsin-Zon Tsai; Chad Germany; Takashi Taniguchi; Kenji Watanabe; Alex Zettl; Feng Wang; Michael F Crommie
Journal:  Nat Nanotechnol       Date:  2015-08-24       Impact factor: 39.213

2.  Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling.

Authors:  N J Bailey; T B O Rockett; S Flores; D F Reyes; J P R David; R D Richards
Journal:  Sci Rep       Date:  2022-01-17       Impact factor: 4.379
  2 in total

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