Literature DB >> 10054518

Generation of point defects in crystalline silicon by MeV heavy ions: Dose rate and temperature dependence.

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Abstract

Entities:  

Year:  1993        PMID： 10054518     DOI： 10.1103/PhysRevLett.71.1860

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


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  2 in total

1.  The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si.

Authors:  J B Wallace; L B Bayu Aji; A A Martin; S J Shin; L Shao; S O Kucheyev
Journal:  Sci Rep       Date:  2017-01-06       Impact factor: 4.379

2.  Enhanced Low-Neutron-Flux Sensitivity Effect in Boron-Doped Silicon.

Authors:  Guixia Yang; Kunlin Wu; Jianyong Liu; Dehui Zou; Junjie Li; Yi Lu; Xueyang Lv; Jiayun Xu; Liang Qiao; Xuqiang Liu
Journal:  Nanomaterials (Basel)       Date:  2020-05-05       Impact factor: 5.076
  2 in total

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