Literature DB >> 10053346

Off-center atomic displacements in zinc-blende semiconductor.

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Abstract

Entities:  

Year:  1993        PMID： 10053346     DOI： 10.1103/PhysRevLett.70.1639

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


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  1 in total

1.  Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices.

Authors:  Junhyeok Bang; Y Y Sun; Jung-Hoon Song; S B Zhang
Journal:  Sci Rep       Date:  2016-04-14       Impact factor: 4.379
  1 in total

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