Literature DB >> 10047035

Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layers.

.   

Abstract

Year:  1992        PMID： 10047035     DOI： 10.1103/PhysRevLett.69.796

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


× No keyword cloud information.
  2 in total

1.  Mn as Surfactant for the Self-Assembling of Al x Ga1-x N/GaN Layered Heterostructures.

Authors:  Thibaut Devillers; Li Tian; Rajdeep Adhikari; Giulia Capuzzo; Alberta Bonanni
Journal:  Cryst Growth Des       Date:  2015-01-08       Impact factor: 4.076

2.  Growth selectivity control of InAs shells on crystal phase engineered GaAs nanowires.

Authors:  Víctor J Gómez; Mikelis Marnauza; Kimberly A Dick; Sebastian Lehmann
Journal:  Nanoscale Adv       Date:  2022-04-08
  2 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.